FDD6512A - Fairchild Semiconductor

FDD6512A 20V N-Channel PowerTrench MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package. Features • 36 A, 20 V RDS(ON) = 21 mΩ @ VGS = 4.5 V RDS(ON).

Features

• 36 A, 20 V RDS(ON) = 21 mΩ @ VGS = 4.5 V RDS(ON) = 31 mΩ @ VGS = 2.5 V
• Low gate charge (12 nC typical)
• Fast switching
• High performance trench technology for extremely low RDS(ON) Applications
• DC/DC converter
• Motor drives D D G S I-PAK (TO-251AA) G D S G D-PAK TO-252 (TO-252) S o Absolute Maximum Ratings Symbol VDSS VGSS ID TA=25 C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C @TA=25°C Pulsed (Note 3) (Note 1a) (Note 1a) (Note 3) (Note 1a) (Note 1b) Ratings 20 ± 12 36 10.7 100 43 3.8 1.6
  –55 to +175 Units V V A .