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FDD603AL |
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| Part Number | FDD603AL |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to m... |
| Features |
33 A, 30 V. RDS(ON) = 0.023 Ω @ VGS = 10 V RDS(ON) = 0.037 Ω @ VGS = 4.5 V.
Critical DC electrical parameters specified at elevated temperature. Rugged avalanche-rated internal source-drain diode can eliminate the need for external Zener Diode. High density cell design for extremely low RDS(ON) .
Applications
DC/DC converters Motor drives
D
D G S
TO-252
Absolute Maximum Ratings
Symbol
V DSS V GSS ID Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous Maximum Drain Current PD T A = 25 ° C -Pulsed T A = 25 o C T A = 25 o C T J, T stg
(Note 1) (Note 1a) T ... |
| Document |
 FDD603AL Data Sheet
PDF 237.55KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
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