FDD5680 - ON Semiconductor

FDD5680 N-Channel Power MOSFET

This N-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications • DC/DC converter • Motor drives Features • 38 A, 60 V. RDS(on) = 0.021 Ω @ VGS = 10 V RDS(on) = 0.025 Ω @ VGS = 6 V. •.

Features

• 38 A, 60 V. RDS(on) = 0.021 Ω @ VGS = 10 V RDS(on) = 0.025 Ω @ VGS = 6 V.
• Low gate charge (33nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(on). D D G G S TO-252 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD TJ, Tstg Parameter Drain-Source Voltage Gate-Source Voltage Maximun Drain Current - Continuous (Note 1) (Note 1a) Maximum Drain Current - Pulsed Maximum Power Dissipation @ TC = 25oC (Note 1) TA = 25oC (Note 1a) TA = 25oC (Note 1b) Operating and Storage Junction Temperature Range Thermal C.