FDD5810 - Fairchild Semiconductor

FDD5810 N-Channel Logic Level Trench MOSFET

FDD5810 N-Channel Logic Level Trench® MOSFET MPLEMENTATION October 2007 FDD5810 N-Channel Logic Level Trench® MOSFET 60V, 36A, 27mΩ Features „ RDS(ON) = 22mΩ (Typ.), VGS = 5V, ID = 29A „ Qg(5) = 13nC (Typ.), VGS = 5V „ Low Miller Charge „ Low Qrr Body Diode „ UIS Capability (Single Pulse / Repetitive Pulse) „ Qualified to AEC Q101 „ RoHS Compliant Applic.

Features

„ RDS(ON) = 22mΩ (Typ.), VGS = 5V, ID = 29A „ Qg(5) = 13nC (Typ.), VGS = 5V „ Low Miller Charge „ Low Qrr Body Diode „ UIS Capability (Single Pulse / Repetitive Pulse) „ Qualified to AEC Q101 „ RoHS Compliant Applications „ Motor / Body Load Control „ ABS Systems „ Powertrain Management „ Injection System „ DC-DC converters and Off-line UPS „ Distributed Power Architecture and VRMs „ Primary Switch for 12V and 24V systems AD FREE I LE D G S DTO-P-2A5K2 (TO-252) D G S ©2006 Fairchild Semiconductor Corporation FDD5810 Rev. A (W) 1 www.fairchildsemi.com FDD5810 N-Channel Logic Level Trenc.