FDD5353 - Fairchild Semiconductor

FDD5353 MOSFET

 Max rDS(on) = 12.3m at VGS = 10V, ID = 10.7A  Max rDS(on) = 15.4m at VGS = 4.5V, ID = 9.5A  100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.  RoHS Compliant Applicati.

Features

General Description
 Max rDS(on) = 12.3m at VGS = 10V, ID = 10.7A
 Max rDS(on) = 15.4m at VGS = 4.5V, ID = 9.5A
 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
 RoHS Compliant Application
 Inverter
 Synchronous rectifier
 Primary switch G S D DT O-P-2A5K2 (T O -25 2) D G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Vo.