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FDD5680 |
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| Part Number | FDD5680 |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge fo... |
| Features |
• • • 38 A, 60 V. RDS(on) = 0.021 Ω @ VGS = 10 V RDS(on) = 0.025 Ω @ VGS = 6 V. Low gate charge (33nC typical). Fast switching speed. High performance trench technology for extremely low RDS(on). Applications • • DC/DC converter Motor drives • D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage TA=25 C unless otherwise noted o Parameter Ratings 60 ±20 (Note 1) (Note 1a) Units V V A Maximun Drain Current - Continuous Maximum Drain Current - Pulsed 38 8.5 100 60 2.8 1.3 -55 to +150 PD Maximum Power Dissipation @ TC = 25oC TA = 25... |
| Document |
 FDD5680 Data Sheet
PDF 83.17KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDD5680 |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 2 | FDD5612 |
ON Semiconductor |
N-Channel MOSFET |
|
| 3 | FDD5612 |
Fairchild Semiconductor |
60V N-Channel PowerTrench MOSFET |
|
| 4 | FDD5614P |
ON Semiconductor |
P-Channel MOSFET |
|
| 5 | FDD5614P |
Fairchild Semiconductor |
60V P-Channel PowerTrench MOSFET |
|