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FDD5680 |
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| Part Number | FDD5680 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This N-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for super... |
| Features |
• 38 A, 60 V. RDS(on) = 0.021 Ω @ VGS = 10 V RDS(on) = 0.025 Ω @ VGS = 6 V. • Low gate charge (33nC typical). • Fast switching speed. • High performance trench technology for extremely low RDS(on). D D G G S TO-252 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD TJ, Tstg Parameter Drain-Source Voltage Gate-Source Voltage Maximun Drain Current - Continuous (Note 1) (Note 1a) Maximum Drain Current - Pulsed Maximum Power Dissipation @ TC = 25oC (Note 1) TA = 25oC (Note 1a) TA = 25oC (Note 1b) Operating and Storage Junction Temperature Range Thermal C... |
| Document |
 FDD5680 Data Sheet
PDF 431.81KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDD5680 |
Fairchild Semiconductor |
N-Channel/ PowerTrench MOSFET |
|
| 2 | FDD5612 |
ON Semiconductor |
N-Channel MOSFET |
|
| 3 | FDD5612 |
Fairchild Semiconductor |
60V N-Channel PowerTrench MOSFET |
|
| 4 | FDD5614P |
ON Semiconductor |
P-Channel MOSFET |
|
| 5 | FDD5614P |
Fairchild Semiconductor |
60V P-Channel PowerTrench MOSFET |
|