FDD3580 - Fairchild Semiconductor

FDD3580 80V N-Channel PowerTrench MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features faster switching and lower gate change than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficie.

Features

faster switching and lower gate change than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency. Features
• 7.7 A, 80 V. RDS(ON) = 29 mΩ @ VGS = 10 V RDS(ON) = 33 mΩ @ VGS = 6 V
• Low gate charge (34nC typical)
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability D G S D I-PAK (TO-251AA) G D-PAK D-PAK TO-252 (TO-252) (TO- G D S S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TA=25oC unless otherwise noted Parameter Drain-Source Volta.