FDD3510H - ON Semiconductor

FDD3510H Dual N & P-Channel Power MOSFET

These dual N and P- Channel enhancement mode Power MOSFETs are produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on -state resistance and yet maintain superior switching performance. Applications „ Inverter „ H-Bridge D1/D2 D1 D2 G2 S2 G1 S1 Dual DPAK 4L G1 G2 S1 N-Channel S2 P-Channel MOSF.

Features

Q1: N-Channel „ Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A „ Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel „ Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A „ Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A „ 100% UIL Tested „ RoHS Compliant General Description These dual N and P- Channel enhancement mode Power MOSFETs are produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on -state resistance and yet maintain superior switching performance. Applications „ Inverter „ H-Bridge D1/D2 D1 D2 G2 S2 G1 S1 Dual DPAK 4L G1 G2 S1.