This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features faster switching and lower gate change than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher ove.
faster switching and lower gate change than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency.
Features
• 10 A, 80 V. RDS(ON) = 0.019 Ω @ VGS = 10 V RDS(ON) = 0.022 Ω @ VGS = 6 V.
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON) .
• High power and current handling capability.
D
G S
TO-252
D
G
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID
TA=25 C unless otherwise noted
o
Parameter
Drain-Source Voltage Gate-Source Voltage Maximum Drain Current-Continuous Maximum Drain Curren.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDD3510H |
Fairchild Semiconductor |
Dual N&P-Channel MOSFET | |
2 | FDD3510H |
ON Semiconductor |
Dual N & P-Channel Power MOSFET | |
3 | FDD3580 |
Fairchild Semiconductor |
80V N-Channel PowerTrench MOSFET | |
4 | FDD306P |
Fairchild Semiconductor |
MOSFET | |
5 | FDD3670 |
Fairchild Semiconductor |
100V N-Channel PowerTrench MOSFET | |
6 | FDD3670 |
ON Semiconductor |
N-Channel MOSFET | |
7 | FDD3672 |
Fairchild Semiconductor |
N-Channel MOSFET | |
8 | FDD3672_F085 |
Fairchild Semiconductor |
N-Channel UltraFET Trench MOSFET | |
9 | FDD3680 |
Fairchild Semiconductor |
100V N-Channel PowerTrench MOSFET | |
10 | FDD3680 |
ON Semiconductor |
N-Channel MOSFET | |
11 | FDD3682 |
Fairchild Semiconductor |
N-Channel MOSFET | |
12 | FDD3682 |
INCHANGE |
N-Channel MOSFET |