FDD3680 - ON Semiconductor

FDD3680 N-Channel MOSFET

This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at v.

Features

• 25 A, 100 V. RDS(ON) = 46 mW @ VGS = 10 V RDS(ON) = 51 mW @ VGS = 6 V
• Low Gate Charge (38 nC Typical)
• Fast Switching Speed
• High Performance Trench Technology for Extremely Low RDS(ON)
• High Power and Current Handling Capability ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS VGSS ID Drain−Source Voltage Gate−Source Voltage Drain Current − Continuous (Note 1) Drain Current − Pulsed 100 V +20 V 25 A 100 PD Maximum Power Dissipation (Note 1) 68 W (Note 1a) 3.8 (Note 1b) 1.6 TJ, TSTG Operating and Storage Junction Tempe.