FDD3672_F085 - Fairchild Semiconductor

FDD3672_F085 N-Channel UltraFET Trench MOSFET

FDD3672_F085 N-Channel UltraFET Trench MOSFET March 2011 FDD3672_F085 N-Channel UltraFET Trench MOSFET 100V, 44A, 28mΩ Features „ Typ rDS(on) = 24mΩ at VGS = 10V, ID = 44A „ Typ Qg(10) = 24nC at VGS = 10V „ Low Miller Charge „ Low Qrr Body Diode „ Optimized efficiency at high frequencies „ UIS Capability (Single Pulse and Repetitive Pulse) „ Qualified to.

Features

„ Typ rDS(on) = 24mΩ at VGS = 10V, ID = 44A „ Typ Qg(10) = 24nC at VGS = 10V „ Low Miller Charge „ Low Qrr Body Diode „ Optimized efficiency at high frequencies „ UIS Capability (Single Pulse and Repetitive Pulse) „ Qualified to AEC Q101 „ RoHS Compliant Applications „ DC/DC converters and Off-Line UPS „ Distributed Power Architectures and VRMs „ Primary Switch for 24V and 48V Systems „ High Voltage Synchronous Rectifier FDD3672_F085 Rev. C 1 www.fairchildsemi.com FDD3672_F085 N-Channel UltraFET Trench MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDS.