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FDC658AP |
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| Part Number | FDC658AP |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel Logic Level MOSFET is produced using Fairchild's advanced PowerTrench process. It has been optimized for battery power management applications. Applications Battery management Load ... |
| Features |
Max rDS(on) = 50 m: @ VGS = -10 V, ID = -4A Max rDS(on) = 75 m: @ VGS = -4.5 V, ID = -3.4A Low Gate Charge High performance trench technology for extremely low
rDS(on) RoHS Compliant
S D D
1
PIN 1
G D D SuperSOTTM-6
2 3
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS ID
PD TJ, TSTG
Drain-Source Voltage
Parameter
Gate-Source Voltage
Drain Current - Continuous
- Pulsed Maximum Power dissipation
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1a) (Note 1b)
Thermal Characteristics
RTJA RTJC
The... |
| Document |
 FDC658AP Data Sheet
PDF 245.87KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDC658AP |
ON Semiconductor |
P-Channel MOSFET |
|
| 2 | FDC658AP-G |
ON Semiconductor |
P-Channel MOSFET |
|
| 3 | FDC658P |
Fairchild Semiconductor |
Single P-Channel MOSFET |
|
| 4 | FDC658P |
ON Semiconductor |
P-Channel MOSFET |
|
| 5 | FDC6506P |
Fairchild Semiconductor |
Dual P-Channel Logic Level PowerTrench MOSFET |
|