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FDC645N |
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| Part Number | FDC645N |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for... |
| Features |
• 5.5 A, 30 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 26 mΩ @ VGS = 10 V • High performance trench technology for extremely low RDS(ON) • Low gate charge (13 nC typical) • High power and current handling capability S D D SuperSOT TM-6 G D D 1 6 2 5 3 4 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Maximum Power Dissipation (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Res... |
| Document |
 FDC645N Data Sheet
PDF 100.86KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDC6401N |
ON Semiconductor |
Dual N-Channel MOSFET |
|
| 2 | FDC6401N |
Fairchild Semiconductor |
Dual N-Channel 2.5V Specified PowerTrench MOSFET |
|
| 3 | FDC640P |
Fairchild Semiconductor |
P-Channel MOSFET |
|
| 4 | FDC640P |
ON Semiconductor |
P-Channel MOSFET |
|
| 5 | FDC6420C |
ON Semiconductor |
Dual-Channel MOSFET |
|