FDC610PZ - ON Semiconductor

FDC610PZ P-Channel MOSFET

This P-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC.

Features

„ Max rDS(on) = 42mΩ at VGS =
  –10V, ID =
  –4.9A „ Max rDS(on) = 75mΩ at VGS =
  –4.5V, ID =
  –3.7A „ Low gate charge (17nC typical). „ High performance trench technology for extremely low rDS(on). „ SuperSOTTM
  –6 package: small footprint (72% smaller than standard SO
  –8) low profile (1mm thick). „ RoHS Compliant General Description This P-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery .