FDC6020C - Fairchild Semiconductor

FDC6020C Complementary PowerTrench MOSFET

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. F.

Features

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• Q1
  –4.2 A,
  –20V. RDS(ON) = 55 mΩ @ VGS =
  – 4.5 V RDS(ON) = 82 mΩ @ VGS =
  – 2.5 V Q2 5.9 A, 20V. RDS(ON) = 27 mΩ @ VGS = 4.5 V RDS(ON) = 39 mΩ @ VGS = 2.5 V Low gate charge High performance trench technology for extremely low RDS(ON). FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size Applications
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• DC/DC converter Load switch Motor Driving Bottom Drain Contact Q2 (N) 4 5 6 Q1 (P) Bottom Drain Contact 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage TA = 25°C unless otherwise noted Parameter Q1.