Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
FDC610PZ |
Click to view a larger image
| Part Number | FDC610PZ |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This P-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for supe... |
| Features |
Max rDS(on) = 42mΩ at VGS = –10V, ID = –4.9A Max rDS(on) = 75mΩ at VGS = –4.5V, ID = –3.7A Low gate charge (17nC typical). High performance trench technology for extremely low rDS(on). SuperSOTTM –6 package: small footprint (72% smaller than standard SO –8) low profile (1mm thick). RoHS Compliant General Description This P-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery ... |
| Document |
 FDC610PZ Data Sheet
PDF 443.38KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDC610PZ |
Fairchild Semiconductor |
MOSFET |
|
| 2 | FDC6000NZ |
Fairchild Semiconductor |
Dual N-Channel 2.5V Specified PowerTrench MOSFET |
|
| 3 | FDC6020C |
Fairchild Semiconductor |
Complementary PowerTrench MOSFET |
|
| 4 | FDC602P |
Fairchild Semiconductor |
P-Channel MOSFET |
|
| 5 | FDC6036P |
Fairchild Semiconductor |
P-Channel 1.8V Specified PowerTrench MOSFET |
|