FDC606P - Fairchild Semiconductor

FDC606P P-Channel 1.8V Specified PowerTrench MOSFET

This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –6 A, –12 V. RDS(ON) = 26 mΩ @ VGS = –4.5 V RDS(ON) = 35 mΩ @ VGS = –2.5 V RDS(ON) = 53 mΩ @ VGS = –1.8 V Applications • Battery management • Load switch • Battery protection • Fast switching sp.

Features

•
  –6 A,
  –12 V. RDS(ON) = 26 mΩ @ VGS =
  –4.5 V RDS(ON) = 35 mΩ @ VGS =
  –2.5 V RDS(ON) = 53 mΩ @ VGS =
  –1.8 V Applications
• Battery management
• Load switch
• Battery protection
• Fast switching speed
• High performance trench technology for extremely low RDS(ON) D D S 1 2 G 6 5 4 SuperSOT TM -6 D D 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed Maximum Power Dissipation TA=25oC unless otherwise noted Parameter Ratings
  –12 ±8 (Note 1a) Units V V A W °C
  –6
  –20 1.6 0.8
  –55 to +150 (Note 1a) .