FDC6036P - Fairchild Semiconductor

FDC6036P P-Channel 1.8V Specified PowerTrench MOSFET

This dual P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SSOT-6, the RDS(ON) and thermal properties of the device are optimized for battery power management applications. Features • –5 A, –20 V. RDS(ON) = 44 mΩ @ VGS = –4.5 V RDS(ON) = 64 mΩ @ VGS = –2.5 V RDS(ON) = 95 mΩ @ VGS = –1.8 V • Low gate.

Features

•
  –5 A,
  –20 V. RDS(ON) = 44 mΩ @ VGS =
  –4.5 V RDS(ON) = 64 mΩ @ VGS =
  –2.5 V RDS(ON) = 95 mΩ @ VGS =
  –1.8 V
• Low gate charge, High Power and Current handling capability
• High performance trench technology for extremely low RDS(ON)
• FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size Bottom Drain Contact Applications
• Battery management/Charger Application
• Load switch 4 5 6 Bottom Drain Contact 3 2 1 MOSFET Maximum Ratings Symbol VDSS VGSS ID PD TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuou.