FDB2670 - Fairchild Semiconductor

FDB2670 N-Channel MOSFET

This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and fast switching will benefit. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result .

Features

• 19 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V
• Low gate charge (27 nC typical)
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability D D G G D S TO-220 FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD dv/dt TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed TA=25oC unless otherwise noted Parameter Ratings 200 ± 20 (Note 1) (Note 1) Units V V A A W W°/C V/ns °C 19 40 93 0.63 3.2
  –65 to +175 Total Power Dissipation @ TC = 25°C Derate a.