FDB20AN06A0 - Fairchild Semiconductor

FDB20AN06A0 N-Channel PowerTrench MOSFET

FDB20AN06A0 / FDP20AN06A0 June 2003 FDB20AN06A0 / FDP20AN06A0 N-Channel PowerTrench® MOSFET 60V, 45A, 20mΩ Features • r DS(ON) = 17mΩ (Typ.), VGS = 10V, ID = 45A • Qg(tot) = 15nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82547 Applicat.

Features

• r DS(ON) = 17mΩ (Typ.), VGS = 10V, ID = 45A
• Qg(tot) = 15nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101 Formerly developmental type 82547 Applications
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems DRAIN (FLANGE) D SOURCE DRAIN GATE SOURCE GATE G www.DataSheet4U.com TO-220AB FDP SERIES TO-263AB DRAIN (FLANGE) S FDB SERIES MOSFET Maxim.