FDB2532-F085 - ON Semiconductor

FDB2532-F085 N-Channel MOSFET

MOSFET – N-Channel, POWERTRENCH) 150 V, 79 A, 16 mW FDB2532-F085 Features • RDS(ON) = 14 mW (Typ.), VGS = 10 V, ID = 33 A • Qg (tot) = 82 nC (Typ.), VGS = 10 V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • DC.

Features

• RDS(ON) = 14 mW (Typ.), VGS = 10 V, ID = 33 A
• Qg (tot) = 82 nC (Typ.), VGS = 10 V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant Applications
• DC/DC converters and Off−Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24 V and 48 V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42 V Automotive Load Control
• Electronic Valve Train Systems
• Synchronous Rectification DATA SHEET www.onsem.