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FDB2670 |
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| Part Number | FDB2670 |
| Manufacturer | Kexin |
| Description | SMD Type MOSFET 200V N-Channel PowerTrench MOSFET KDB2670(FDB2670) Features 19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V Low gate charge (27 nC typical) Fast switching speed High performance trench te... |
| Features |
19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V Low gate charge (27 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability
+0.25.28 -0.2
+0.28.7 -0.2
TO-263
+0.2
4.57+0.1 -0.2 1.27-0.1
Unit: mm
+0.11.27 -0.1
+0.22.54 -0.2 15.25-+00..22 5.60
1.27+0.1 -0.1
0.1max
2.54+0.2 -0.2
5.08+0.1 -0.1
0.81+0.1 -0.1
2.54
0.4+0.2 -0.2
1 Gate 2 Drain 3 Source
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current-Continuous Drain current-Pulsed Power dissipation
Derate abo... |
| Document |
 FDB2670 Data Sheet
PDF 47.13KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDB2670 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FDB2614 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 3 | FDB20AN06A0 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET |
|
| 4 | FDB24AN06LA0 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET |
|
| 5 | FDB2532 |
Fairchild Semiconductor |
N-Channel MOSFET |
|