FDB2614 - Fairchild Semiconductor

FDB2614 N-Channel MOSFET

This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications • Synchronous Rectification • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies D D G S D2-PAK G S Absolute Ma.

Features

• RDS(on) = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A
• High Performance Trench technology for Extremely Low RDS(on)
• Low Gate Charge
• High Power and Current Handing Capability General Description This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications
• Synchronous Rectification
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies D D G S D2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise no.