F60UP30DN - Thinki Semiconductor

F60UP30DN Ultra Fast Recovery Rectifiers

F60UP30DN using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic. Absolute Maximum Ratings Parameter Repetitive peak reverse voltage Symbol VRRM Test Conditions Values 300 Units V Continuous forward current IF(AV) Tc =110°C 60 Single pulse forward current IFSM Tc =25°C 600 A Maximum repetiti.

Features

unction Tj 175 °C Storage temperatures Tstg -55 to +175 °C Electrical characteristics (Ta=25°C unless otherwise specified) Parameter Breakdown voltage Blocking voltage Symbol VBR, VR Forward voltage (Per Diode) VF Test Conditions IR=100µA IF=30A IF=30A, Tj =125°C Reverse leakage current(Per Diode) IR VR= VRRM Tj=150°C, VR=300V Reverse recovery time(Per Diode) trr Thermal characteristics Paramter IF=0.5A, IR=1A, IRR=0.25A IF=1A,VR=30V, di/dt =200A/us Symbol Junction-to-Case RθJC Min Typ. 300 0.96 0.85 35 26 Typ 0.8 Max. Units 1.20 V 1.00 10 µA 100 45 ns 40 Units ℃/W.