F60UP20DN - Thinki Semiconductor

F60UP20DN Common Cathode Fast Recovery Epitaxial Diode

F60UP20DN using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic. ABSOLUTE MAXIMUM RATINGS TC=25°C unless otherwise specified Symbol Parameter Test Conditions Values Unit VR Maximum D.C. Reverse Voltage 200 V V RRM Maximum Repetitive Reverse Voltage 200 V I F(AV) Average Forward Current TC=.

Features

M RMS Forward Current Non-Repetitive Surge Forward Current TC=100°C, Per Diode TJ=45°C, t=10ms, 50Hz, Sine 53 300 A A PD Power Dissipation 156 W TJ Junction Temperature -40 to +150 °C T STG Torque Storage Temperature Range Module-to-Sink Recommended（M3） -40 to +150 1.1 °C N
·m R θJC Thermal Resistance Weight ELECTRICAL CHARACTERISTICS Junction-to-Case 0.8 °C /W 6.0 g TC=25°C unless otherwise specified Symbol Parameter IRM Reverse Leakage Current Test Conditions VR=200V VR=200V, TJ=125°C Min. Typ. Max. -- -- 25 -- -- 250 Unit µA µA VF Forward Voltage I F =30A IF=30A, .