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Features
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unction
Tj
175
°C
Storage temperatures
Tstg
-55 to +175 °C
Electrical characteristics (Ta=25°C unless otherwise specified)
Parameter Breakdown voltage Blocking voltage
Symbol VBR, VR
Forward voltage (Per Diode)
VF
Test Conditions IR=100µA IF=30A
IF=30A, Tj =125°C
Reverse leakage current(Per Diode)
IR
VR= VRRM Tj=150°C, VR=300V
Reverse recovery time(Per Diode)
trr
Thermal characteristics
Paramter
IF=0.5A, IR=1A, IRR=0.25A IF=1A,VR=30V, di/dt =200A/us
Symbol
Junction-to-Case
RθJC
Min Typ. 300
0.96 0.85
35 26 Typ 0.8
Max. Units
1.20
V
1.00
10 µA
100
45 ns
40
Units ℃/W...
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F60UP30DN Data Sheet
