F60SA60DS using ThinkiSemi lastest FRED FAB process(planar passivation pellet) with ultrafast soft recovery characteristics. Absolute Maximum Ratings (per leg) TC=25°C unless otherwise noted Symbol Parameter Value VRRM Peak Repetitive Reverse Voltage 600 VRWM Working Peak Reverse Voltage 600 VR DC Blocking Voltage 600 IF(AV) Average Rectified .
DESCRIPTION F60SA60DS using ThinkiSemi lastest FRED FAB process(planar passivation pellet) with ultrafast soft recovery characteristics. Absolute Maximum Ratings (per leg) TC=25°C unless otherwise noted Symbol Parameter Value VRRM Peak Repetitive Reverse Voltage 600 VRWM Working Peak Reverse Voltage 600 VR DC Blocking Voltage 600 IF(AV) Average Rectified Forward Current @ TC = 95 °C 8 IFSM Non-repetitive Peak Surge Current 80 60Hz Single Half-Sine Wave PD WAVL TJ, TSTG Power Dissipation Avalanche Energy (1A, 40mH) Operating Junction and Storage Temperature 26 20 - 65 t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | F6005 |
CSF |
Triode | |
2 | F6043 |
CSF |
Triode | |
3 | F6047 |
CSF |
Triode | |
4 | F6051 |
CSF |
Triode | |
5 | F6053 |
CSF |
Tube | |
6 | F60800010 |
Pericom Semiconductor |
TYPE F6 6x3.5 GLASS SEALED CRYSTAL | |
7 | F60B150DS |
Fairchild Semiconductor |
FFPF60B150DS | |
8 | F60N06P |
KEC |
KF60N06P | |
9 | F60UA60DN |
Fairchild Semiconductor |
FFAF60UA60DN | |
10 | F60UP20DN |
Thinki Semiconductor |
Common Cathode Fast Recovery Epitaxial Diode | |
11 | F60UP30DN |
Fairchild Semiconductor |
FFAF60UP30DN | |
12 | F60UP30DN |
Thinki Semiconductor |
Ultra Fast Recovery Rectifiers |