Data Sheet RFP12N10L October 2013 N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accompl.
• 12A, 100V
• rDS(ON) = 0.200Ω
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from QMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards
Symbol
D
Packaging
G S
DRAIN (TAB)
JEDEC TO-220AB
SOURCE DRAIN GATE
©2005 Fairchild Semiconductor Corporation
RFP12N10L Rev. C0
RFP12N10L
Absolute Maximum Ratings TC = 25oC, Un.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | F12N100 |
Solitron Devices |
N-Channel MOSFET | |
2 | F12N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
3 | F12N65 |
Pan Jit International |
650V N-CHANNEL MOSFET | |
4 | F12NM50N |
STMicroelectronics |
N-channel Power MOSFET | |
5 | F12-25R12KT4G |
Infineon |
IGBT | |
6 | F1200A |
Diotec |
Fast Efficient Rectifier Diodes | |
7 | F1200A |
Semikron |
High efficiency fast silicion rectifier diode | |
8 | F1200A |
EIC |
FAST RECOVERY RECTIFIER DIODES | |
9 | F1200B |
Diotec |
Fast Efficient Rectifier Diodes | |
10 | F1200B |
Semikron |
High efficiency fast silicion rectifier diode | |
11 | F1200D |
Diotec |
Fast Efficient Rectifier Diodes | |
12 | F1200D |
Semikron |
High efficiency fast silicion rectifier diode |