ucThis series of devices is realized with the second dgeneration of MDmesh™ technology. This rorevolutionary Power MOSFET associates a new Pvertical structure to the company’s strip layout to teyield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most Obsoledemanding high efficiency converters. 3 2 1 TO-220 3 1 D.
Type
VDSS (@Tjmax)
RDS(on) max
ID
STB12NM50N
t(s)STD12NM50N cSTI12NM50N uSTF12NM50N rodSTP12NM50N
550 V 550 V 550 V 550 V 550 V
0.38 Ω 0.38 Ω 0.38 Ω 0.38 Ω 0.38 Ω
11 A 11 A 11 A 11 A (1) 11 A
P
■ 100% avalanche tested te
■ Low input capacitance and gate charge le
■ Low gate input resistance
bsoApplication
- O
■ Switching applications
t(s)Description
ucThis series of devices is realized with the second dgeneration of MDmesh™ technology. This rorevolutionary Power MOSFET associates a new Pvertical structure to the company’s strip layout to teyield one of the world’s lowest on-resistance.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | F12N100 |
Solitron Devices |
N-Channel MOSFET | |
2 | F12N10L |
Fairchild Semiconductor |
N-Channel Logic Level Power MOSFET | |
3 | F12N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
4 | F12N65 |
Pan Jit International |
650V N-CHANNEL MOSFET | |
5 | F12-25R12KT4G |
Infineon |
IGBT | |
6 | F1200A |
Diotec |
Fast Efficient Rectifier Diodes | |
7 | F1200A |
Semikron |
High efficiency fast silicion rectifier diode | |
8 | F1200A |
EIC |
FAST RECOVERY RECTIFIER DIODES | |
9 | F1200B |
Diotec |
Fast Efficient Rectifier Diodes | |
10 | F1200B |
Semikron |
High efficiency fast silicion rectifier diode | |
11 | F1200D |
Diotec |
Fast Efficient Rectifier Diodes | |
12 | F1200D |
Semikron |
High efficiency fast silicion rectifier diode |