TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules F12-25R12KT4G EconoPACK™3ModulmitTrench/FeldstoppIGBT4undEmitterControlled4Diode EconoPACK™3modulewithtrench/fieldstopIGBT4andEmitterControlled4Diode IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues VorläufigeDaten PreliminaryData .
A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 0,80 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | F1200A |
Diotec |
Fast Efficient Rectifier Diodes | |
2 | F1200A |
Semikron |
High efficiency fast silicion rectifier diode | |
3 | F1200A |
EIC |
FAST RECOVERY RECTIFIER DIODES | |
4 | F1200B |
Diotec |
Fast Efficient Rectifier Diodes | |
5 | F1200B |
Semikron |
High efficiency fast silicion rectifier diode | |
6 | F1200D |
Diotec |
Fast Efficient Rectifier Diodes | |
7 | F1200D |
Semikron |
High efficiency fast silicion rectifier diode | |
8 | F1200D |
EIC |
FAST RECOVERY RECTIFIER DIODES | |
9 | F1200G |
Diotec |
Fast Efficient Rectifier Diodes | |
10 | F1200G |
Semikron |
High efficiency fast silicion rectifier diode | |
11 | F1205D-1W |
REICU |
DC/DC CONVERTER | |
12 | F1205M-1W |
REICU |
DC/DC CONVERTER |