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F12N10L |
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| Part Number | F12N10L |
| Manufacturer | Fairchild Semiconductor |
| Description | Data Sheet RFP12N10L October 2013 N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for us... |
| Features |
• 12A, 100V • rDS(ON) = 0.200Ω • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits • Compatible with Automotive Drive Requirements • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards Symbol D Packaging G S DRAIN (TAB) JEDEC TO-220AB SOURCE DRAIN GATE ©2005 Fairchild Semiconductor Corporation RFP12N10L Rev. C0 RFP12N10L Absolute Maximum Ratings TC = 25oC, Un... |
| Document |
 F12N10L Data Sheet
PDF 414.31KB |
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