F12N60C - Fairchild Semiconductor

F12N60C 600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.

Features

• 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, ID = 6 A
• Low Gate Charge (Typ. 48 nC)
• Low Crss (Typ. 21 pF)
• 100% Avalanche Tested D GDS TO-220F G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) VGSS EAS IAR EAR dv/dt Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 2) (Note 1) (Note 1) (Note 3) PD Power Dissipation (TC = 25°C) - Der.