P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐20V D RDSON (MAX.) 100mΩ ID ‐3.4A G S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Bottom View S DD SD GD D PIN 1 SYMBOL EMFA0P02VAT LIMITS UNIT Gate‐So.
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | EMFA0P02V |
Excelliance MOS |
MOSFET | |
2 | EMFA0P02J |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor | |
3 | EMFA0P02JS |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor | |
4 | EMFA0P02M |
Excelliance MOS |
MOSFET | |
5 | EMFA0B02G |
Excelliance MOS |
MOSFET | |
6 | EMF02P02H |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor | |
7 | EMF04P02H |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor | |
8 | EMF04P02V |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor | |
9 | EMF09P02A |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor | |
10 | EMF09P02CS |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor | |
11 | EMF09P02V |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor | |
12 | EMF11N02J |
Excelliance MOS |
MOSFET |