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Dual P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐20V RDSON (MAX.) 100mΩ ID ‐3A Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 .
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | EMFA0P02J |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 2 | EMFA0P02JS |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 3 | EMFA0P02M |
Excelliance MOS |
MOSFET |
|
| 4 | EMFA0P02V |
Excelliance MOS |
MOSFET |
|
| 5 | EMFA0P02VAT |
Excelliance MOS |
MOSFET |
|
| 6 | EMF02P02H |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 7 | EMF04P02H |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 8 | EMF04P02V |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 9 | EMF09P02A |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 10 | EMF09P02CS |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 11 | EMF09P02V |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 12 | EMF11N02J |
Excelliance MOS |
MOSFET |
|