EMF04P02H - Excelliance MOS

EMF04P02H P-Channel Logic Level Enhancement Mode Field Effect Transistor

EMF04P02H P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐20V RDSON (MAX.) 5.5mΩ ID ‐72A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±12 Continuous Drain Cur.

Features

A mJ W °C UNIT °C / W 2016/10/3 p.1 EMF04P02H ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = ‐250A VDS = VGS, ID = ‐250A VDS = 0V, VGS = ±12V VDS = ‐16V, VGS = 0V VDS = ‐12V, VGS = 0V, TJ = 125 °C VDS = ‐5V, VGS = ‐4.5V VGS = ‐4.5V, ID = ‐20A VGS = ‐2.5V.