P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS -20V RDSON (MAX.) 100mΩ ID -3.4A G S Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TA = 25 °C ID TA .
ed) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±12V VDS = -16V, VGS = 0V VDS = -16V, VGS = 0V, TJ = 125 °C VDS = -5V, VGS = -4.5V VGS = -4.5V, ID = -3.4A VGS = -2.5V, ID = -2.5A VDS = -5V, ID = -3A DYNAMIC -20 V -0.3 -0.75 -1.0 ±100 nA -1 µA -10 -3.4 A 83 100 mΩ 11.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | EMFA0P02JS |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor | |
2 | EMFA0P02M |
Excelliance MOS |
MOSFET | |
3 | EMFA0P02V |
Excelliance MOS |
MOSFET | |
4 | EMFA0P02VAT |
Excelliance MOS |
MOSFET | |
5 | EMFA0B02G |
Excelliance MOS |
MOSFET | |
6 | EMF02P02H |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor | |
7 | EMF04P02H |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor | |
8 | EMF04P02V |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor | |
9 | EMF09P02A |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor | |
10 | EMF09P02CS |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor | |
11 | EMF09P02V |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor | |
12 | EMF11N02J |
Excelliance MOS |
MOSFET |