EIC7785-8 - Excelics Semiconductor

EIC7785-8 Internally Matched Power FET

www.DataSheet4U.com EIC7785-8 UPDATED 08/21/2007 7.70-8.50GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • • 7.70–8.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 34% Power Added Efficiency -46 dBc IM3 at PO = 28.5 dBm SCL 100% Tested for DC, RF, and RTH .

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• 7.70
  –8.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 34% Power Added Efficiency -46 dBc IM3 at PO = 28.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 7.70-8.50GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 7.70-8.50GHz VDS = 10 V, IDSQ ≈ 2200mA Gain Flatness f = 7.70-8.50GHz VDS = 10 V, IDSQ ≈ 2200mA Power Added Efficiency at 1dB Compres.