www.DataSheet4U.com EIC7179-4 UPDATED 08/21/2007 7.10-7.90GHz 4-Watt Internally-Matched Power FET FEATURES • • • • • • • 7.10–7.90GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 35% Power Added Efficiency -46 dBc IM3 at PO = 25.5 dBm SCL 100% Tested for DC, RF, and RTH .
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• 7.10
–7.90GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 35% Power Added Efficiency -46 dBc IM3 at PO = 25.5 dBm SCL 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 7.10-7.90GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 7.10-7.90GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 7.10-7.90GHz VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Compres.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | EIC7179-12 |
Excelics Semiconductor |
Internally Matched Power FET | |
2 | EIC7179-5 |
Excelics Semiconductor |
Internally Matched Power FET | |
3 | EIC7179-8 |
Excelics Semiconductor |
Internally Matched Power FET | |
4 | EIC7177-10 |
Excelics Semiconductor |
Internally Matched Power FET | |
5 | EIC7678-25 |
Excelics Semiconductor |
Internally Matched Power FET | |
6 | EIC7785-10 |
Excelics Semiconductor |
Internally Matched Power FET | |
7 | EIC7785-4 |
Excelics Semiconductor |
Internally Matched Power FET | |
8 | EIC7785-5 |
Excelics Semiconductor |
Internally Matched Power FET | |
9 | EIC7785-8 |
Excelics Semiconductor |
Internally Matched Power FET | |
10 | EIC0910-12 |
Excelics Semiconductor |
9.50-10.50 GHz 12-Watt Internally Matched Power FET | |
11 | EIC0910-2 |
Excelics Semiconductor |
Internally Matched Power FET | |
12 | EIC0910-25 |
Excelics Semiconductor |
9.50-10.50 GHz 25-Watt Internally Matched Power FET |