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The EIC7177-10 is a high power, highly linear, single stage MFET amplifier in a flange mount package. This amplifier features Excelics’ unique MESFET transistor technology. Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 7.10-7.
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• 7.10
– 7.70 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 9 dB Power Gain at 1dB Compression 35% Power Added Efficiency -46 dBc IM3 at Po = 29.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH
DESCRIPTION
The EIC7177-10 is a high power, highly linear, single stage MFET amplifier in a flange mount package. This amplifier features Excelics’ unique MESFET transistor technology. Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TES.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | EIC7179-12 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 2 | EIC7179-4 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 3 | EIC7179-5 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 4 | EIC7179-8 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 5 | EIC7678-25 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 6 | EIC7785-10 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 7 | EIC7785-4 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 8 | EIC7785-5 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 9 | EIC7785-8 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 10 | EIC0910-12 |
Excelics Semiconductor |
9.50-10.50 GHz 12-Watt Internally Matched Power FET |
|
| 11 | EIC0910-2 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 12 | EIC0910-25 |
Excelics Semiconductor |
9.50-10.50 GHz 25-Watt Internally Matched Power FET |
|