EIC5964-4 - Excelics Semiconductor

EIC5964-4 Internally Matched Power FET

www.DataSheet4U.com EIC5964-4 UPDATED 08/21/2007 5.90-6.40 GHz 4-Watt Internally Matched Power FET FEATURES • • • • • • • 5.90–6.40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 10.0 dB Power Gain at 1dB Compression 37% Power Added Efficiency -46 dBc IM3 at PO = 25.5 dBm SCL 100% Tested for DC, RF, and RT.

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• 5.90
  –6.40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 10.0 dB Power Gain at 1dB Compression 37% Power Added Efficiency -46 dBc IM3 at PO = 25.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH Caution! ESD sensitive device. MIN 35.5 9.0 PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 5.90-6.40GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 5.90-6.40GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 5.90-6.40GHz VDS = 10 V, IDSQ.