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www.DataSheet4U.com EIC5359-8 5.30-5.90GHz, 8W Internally Matched Power FET • • • • • • • 5.30-5.90 GHz BANDWIDTH Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 10 dB Power Gain at 1dB Compression 33% Power Added Efficiency -46 dBc IM3 at Po = 28.5 dBm Hermetic Metal Flange Package Excelics EIC5359-8 YM SN ELECTRICAL .
l Resistance (Au-Sn Eutectic Attach) C/W ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION AT 25°C SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation CONTINUOUS1,2 10V -4.5V Idss 80mA @ 3dB Compression 150 oC -65 to +150 oC 32W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 9.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | EIC5359-10 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 2 | EIC5359-4 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 3 | EIC5964-10 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 4 | EIC5964-4 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 5 | EIC5964-5 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 6 | EIC5964-8 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 7 | EIC5972-12 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 8 | EIC5972-4 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 9 | EIC0910-12 |
Excelics Semiconductor |
9.50-10.50 GHz 12-Watt Internally Matched Power FET |
|
| 10 | EIC0910-2 |
Excelics Semiconductor |
Internally Matched Power FET |
|
| 11 | EIC0910-25 |
Excelics Semiconductor |
9.50-10.50 GHz 25-Watt Internally Matched Power FET |
|
| 12 | EIC0910-4 |
Excelics Semiconductor |
Internally Matched Power FET |
|