EIC5359-10 - Excelics Semiconductor

EIC5359-10 Internally Matched Power FET

www.DataSheet4U.com EIC5359-10 UPDATED 08/16/2005 5.30 – 5.90 GHz 10W Internally Matched Power FET 2X 0.079 MIN 4X 0.102 FEATURES • 5.30-5.90 GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM • HIGH PAE: 30% TYPICAL • +40.5 dBm TYPICAL P1dB OUTPUT POWER • 10dB TYPICAL G1dB POWER GAIN • HERMETIC METAL FLANGE PACKAGE Excelics EIC5359-10 0.945 0.80.

Features

• 5.30-5.90 GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM
• HIGH PAE: 30% TYPICAL
• +40.5 dBm TYPICAL P1dB OUTPUT POWER
• 10dB TYPICAL G1dB POWER GAIN
• HERMETIC METAL FLANGE PACKAGE Excelics EIC5359-10 0.945 0.803 0.024 0.580 YYWW 0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095 0.055 0.168 Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25 C) SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=5.3-5.9GHz, Vds=10V, Idsq=3200Ma Gain at 1dB Compression f=5.3-5.9GHz, Vds=10V, Idsq=3200mA Gain Flatness f = 5.3-5.9GHz, Vds = 10 V, Idsq = 3200mA P.