www.DataSheet4U.com EIC1213-12 ISSUED 3-19-09 12.75-13.25 GHz 12-Watt Internally Matched Power FET Excelics EIC1213-12 .827±.010 .669 .120 MIN FEATURES • • • • • • • 12.75– 13.25 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41 dBm Output Power at 1dB Compression 6 dB Power Gain at 1dB Compression 25% Power Added Efficiency Hermetic Metal Flang.
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• 12.75
– 13.25 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41 dBm Output Power at 1dB Compression 6 dB Power Gain at 1dB Compression 25% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH
.024 .421
YYWW
SN
.120 MIN
.125 .508±.008 .442 .168±.010
ALL DIMENSIONS IN INCHES
.004 .063 .004 .105±.008
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL P1dB G1dB ∆G IMD3 PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 12.75-13.25GHz VDS = 10 V, IDSQ ≈ 3700mA Gain at 1dB Compression f = 12.75-13.25GHz VDS = .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | EIC1213-4 |
Excelics Semiconductor |
Internally Matched Power FET | |
2 | EIC1213-8 |
Excelics Semiconductor |
9.50-10.50 GHz 25-Watt Internally Matched Power FET | |
3 | EIC1212-4 |
Excelics Semiconductor |
Internally Matched Power FET | |
4 | EIC1212-8 |
Excelics Semiconductor |
Internally Matched Power FET | |
5 | EIC1010-25 |
Excelics Semiconductor |
9.50-10.50 GHz 25-Watt Internally Matched Power FET | |
6 | EIC1010-4 |
Excelics Semiconductor |
Internally Matched Power FET | |
7 | EIC1010-8 |
Excelics Semiconductor |
Internally Matched Power FET | |
8 | EIC1010A-12 |
Excelics Semiconductor |
Internally Matched Power FET | |
9 | EIC1010A-20 |
Excelics Semiconductor |
Internally Matched Power FET | |
10 | EIC1010A-8 |
Excelics Semiconductor |
Internally Matched Power FET | |
11 | EIC1011-12 |
Excelics Semiconductor |
Internally Matched Power FET | |
12 | EIC1011-4 |
Excelics Semiconductor |
Internally Matched Power FET |