www.DataSheet4U.com EIC1112-8 ISSUED 07/03/2007 11.7-12.7 GHz 8-Watt Internally Matched Power FET 0.060 MIN 0.650±0.008 0.512 GATE FEATURES • • • • • • 11.7– 12.7GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 6.0dB Power Gain at 1dB Compression 30% Power Added Efficiency Hermetic Metal Flange Package Exc.
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• 11.7
– 12.7GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 6.0dB Power Gain at 1dB Compression 30% Power Added Efficiency Hermetic Metal Flange Package
Excelics
EIC1112-8
0.060 MIN 0.022 0.319 DRAIN
YYWW
2X 0.094 0.382 0.004 0.130 0.045 0.071±0.008
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25 C)
SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 11.7-12.7GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 11.7-12.7GHz VDS = 10 V, IDSQ ≈ 2200m.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | EIC1112-5 |
Excelics Semiconductor |
Internally Matched Power FET | |
2 | EIC1010-25 |
Excelics Semiconductor |
9.50-10.50 GHz 25-Watt Internally Matched Power FET | |
3 | EIC1010-4 |
Excelics Semiconductor |
Internally Matched Power FET | |
4 | EIC1010-8 |
Excelics Semiconductor |
Internally Matched Power FET | |
5 | EIC1010A-12 |
Excelics Semiconductor |
Internally Matched Power FET | |
6 | EIC1010A-20 |
Excelics Semiconductor |
Internally Matched Power FET | |
7 | EIC1010A-8 |
Excelics Semiconductor |
Internally Matched Power FET | |
8 | EIC1011-12 |
Excelics Semiconductor |
Internally Matched Power FET | |
9 | EIC1011-4 |
Excelics Semiconductor |
Internally Matched Power FET | |
10 | EIC1011-8 |
Excelics Semiconductor |
Internally Matched Power FET | |
11 | EIC1212-4 |
Excelics Semiconductor |
Internally Matched Power FET | |
12 | EIC1212-8 |
Excelics Semiconductor |
Internally Matched Power FET |