Fast Recovery Epitaxial Diode (FRED) DSEI 120-12A IFAV = 109 A VRRM = 1200 V trr = 40 ns Part number DSEI 120-12A TO-247AD 3 1/4 4 (TAB) Features / Advantages: • Planar passivated chips • Low leakage current • Very short recovery time • Improved thermal behaviour • Extremely low switching losses • Low IRM-values • Soft recovery behaviour • High reliab.
/ Advantages:
• Planar passivated chips
• Low leakage current
• Very short recovery time
• Improved thermal behaviour
• Extremely low switching losses
• Low IRM-values
• Soft recovery behaviour
• High reliability circuit operation
• Low voltage peaks for reduced protection circuits
• Low noise switching
• Low losses
• Operating at lower temperature or
space saving by reduced cooling
Applications:
• Antiparallel diode for high frequency switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
suppl.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DSEI120-12AZ |
IXYS |
Fast Recovery Epitaxial Diode | |
2 | DSEI120-06A |
IXYS Corporation |
Fast Recovery Epitaxial Diode | |
3 | DSEI120 |
IXYS Corporation |
Fast Recovery Epitaxial Diode | |
4 | DSEI12 |
ETC |
Fast Recovery Epitaxial Diode | |
5 | DSEI12-06A |
Inchange |
Ultrafast Rectifier | |
6 | DSEI12-06A |
IXYS Corporation |
Fast Recovery Epitaxial Diode | |
7 | DSEI12-06AS |
IXYS |
Fast Recovery Epitaxial Diode | |
8 | DSEI12-10A |
IXYS |
Fast Recovery Epitaxial Diode | |
9 | DSEI12-10A |
INCHANGE |
Fast Recovery Diode | |
10 | DSEI12-12A |
IXYS Corporation |
Fast Recovery Epitaxial Diode | |
11 | DSEI12-12AZ |
IXYS |
Fast Recovery Epitaxial Diode | |
12 | DSEI19 |
IXYS Corporation |
Fast Recovery Epitaxial Diode |