DSEI19-06AS - IXYS Corporation

DSEI19-06AS Fast Recovery Epitaxial Diode

www.DataSheet4U.com DSEI 19-06AS Fast Recovery Epitaxial Diode (FRED) VRRM = 600 V IFAVM = 20 A trr = 35 ns VRSM V 600 VRRM V 600 Type A C TO-263 AA NC DSEI 19-06AS A C (TAB) A = Anode, C = Cathode, NC = No connection, TAB = Cathode Symbol IFRMS IFAVM ① IFRM IFSM Conditions TVJ = TVJM TC = 65°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pul.

Features

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● International standard surface mount package JEDEC TO-263 AA Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TO-263 AA Outline I2t TVJ = 45°C t = 10 ms t = 8.3 ms TVJ = 150°C; t = 10 ms t = 8.3 ms TVJ TVJM Tstg Ptot Weight TC = 25°C 61 2 Symbol IR Conditions TVJ = 25°C; VR = VRRM TVJ = 25°C; VR = 0.8
• VRRM TVJ = 125°C; VR = 0.8
• VRRM IF = 16 A; TVJ = 150°C TVJ= 25°C Characteristic Values typ. max. 50 25 3 1.5 1.7 1.12 23.2 2 µA µA mA V V V mΩ K/W ns A VF VT0 rT RthJC trr IRM .