DMD1029 - Seme LAB

DMD1029 METAL GATE RF SILICON FET

TetraFET DMD1029 DMD1029-A METAL GATE RF SILICON FET MECHANICAL DATA C (2 pls) 1 HD B 2 3 5 4 E (4 pls) F I G (typ) P (2 pls) A PIN 1 PIN 3 PIN 5 NM O D1 SOURCE (COMMON) DRAIN 2 GATE 1 DIM Millimetres Tol. A 15.24 0.50 B 10.80 0.13 C 45° 5° D 9.78 0.13 E 8.38 0.13 F 27.94 0.13 G 1.52R 0.13 H 10.16 0.15 I 21.84 0.23 J 0.10 .

Features

• SUITABLE FOR BROAD BAND APPLICATIONS
• SIMPLE BIAS CIRCUITS
• ULTRA-LOW THERMAL RESISTANCE
• BeO FREE
• LOW Crss
• HIGH GAIN
  – 16 dB MINIMUM APPLICATIONS
• VHF/UHF COMMUNICATIONS from 1 MHz to 400 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 875W (438W -A Version) BVDSS Drain
  – Source Breakdown Voltage
* 70V BVGSS Gate
  – Source Breakdown Voltage
* ±20V ID(sat) Drain Current
* 35A Tstg Storage Temperature
  –65 to 150°C Tj Maximum Operating Junction Temperature 200°C
* Per Side Semelab Plc reserves the right to change test condition.