TetraFET DMD1009 DMD1009-A ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA C (2 pls) 1 HD B 2 3 5 4 E (4 pls) F I G (typ) P (2 pls) A PIN 1 PIN 3 PIN 5 NM O D1 SOURCE (COMMON) DRAIN 2 GATE 1 JK PIN 2 PIN 4 DRAIN 1 GATE 2 DIM Millimetres Tol. A 15.24 0.50 B 10.80 0.13 C 45° 5° D 9.78 0.13 E 8.38 0.13 F 27.94 0.13 G 1..
• SUITABLE FOR BROAD BAND APPLICATIONS
• SIMPLE BIAS CIRCUITS
• ULTRA-LOW THERMAL RESISTANCE
• BeO FREE
• LOW Crss
• HIGH GAIN
– 12 dB MINIMUM
APPLICATIONS
• VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz
PD BVDSS BVGSS ID(sat) Tstg Tj
* Per Side
Power Dissipation Drain
– Source Breakdown Voltage
* Gate
– Source Breakdown Voltage
* Drain Current
* Storage Temperature Maximum Operating Junction Temperature
648W (389W -A Version) 70V ±20V 20A
–65 to 150°C 200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DMD1006 |
Seme LAB |
METAL GATE RF SILICON FET | |
2 | DMD1006-A |
Seme LAB |
METAL GATE RF SILICON FET | |
3 | DMD1009-A |
Seme LAB |
METAL GATE RF SILICON FET | |
4 | DMD1010 |
Seme LAB |
METAL GATE RF SILICON FET | |
5 | DMD1010-A |
Seme LAB |
METAL GATE RF SILICON FET | |
6 | DMD1012 |
Seme LAB |
METAL GATE RF SILICON FET | |
7 | DMD1012-A |
Seme LAB |
METAL GATE RF SILICON FET | |
8 | DMD1020 |
Seme LAB |
METAL GATE RF SILICON FET | |
9 | DMD1020-A |
Seme LAB |
METAL GATE RF SILICON FET | |
10 | DMD1028 |
Seme LAB |
METAL GATE RF SILICON FET | |
11 | DMD1028-A |
Seme LAB |
METAL GATE RF SILICON FET | |
12 | DMD1029 |
Seme LAB |
METAL GATE RF SILICON FET |