DMD1006 - Seme LAB

DMD1006 METAL GATE RF SILICON FET

TetraFET DMD1006 DMD1006-A ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA D 2 1 A 3 G( 2 pls) F M K J I D2 PIN 1 SOURCE PIN 3 GATE DIM Millimetres Tol. A 19.43 0.13 B 9.78 0.13 C 9.40 0.10 D 45° 5° E 1.63R 0.13 F 27.94 0.13 G 12.70 0.13 H 1.57 0.13 I 34.04 0.13 J 1.01 0.13 K 19.94 0.25 L 0.10 0.25 M 4..

Features

• SUITABLE FOR BROAD BAND APPLICATIONS
• SIMPLE BIAS CIRCUITS
• ULTRA-LOW THERMAL RESISTANCE
• BeO FREE
• LOW Crss
• HIGH GAIN - 15 dB MINIMUM APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS from 1 MHz to 200 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 438W (219W -A Version) BVDSS Drain
  – Source Breakdown Voltage 70V BVGSS Gate
  – Source Breakdown Voltage ±20V ID(sat) Drain Current 30A Tstg Storage Temperature
  –65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab Plc reserves the right to change test conditions, parameter .